ГОСТ 15133-77 Приборы полупроводниковые. Термины и определения (с Изменениями N 1, 2, 3, 4)

Термин

Номер термина

Abrupt junction

5

Active part of base region

29

Alloyed junction

12

Anode terminal (of a semiconductor device)

131

Avalanche rectifier diode

69a

Avalanche reverse blocking thyristor

117a

Avalanche transistor

99

Barrier region (layer)

40

Base region

26

Base thickness modulation

50

Beam lead semiconductor device

134

Bi-directional diode thyristor

109

Bi-directional transistor

104

Bi-directional triode thyristor

113

Bipolar transistor

94

Breakdown of a P-N junction

45

Cathode terminal (of a semiconductor device)

130

Channel

31

Collector junction

22

Collector region

28

Controlled-avalanche rectifier diode

69б

Conversion junction

11

Depletion layer

39

Detector diode

84

Diffused junction

9

Diffusion transistor

95

Diode thyristor

106

Drain

33

Drift (diffused) transistor

96

Electrode (of a semiconductor device)

135а

Emitter junction

21

Emitter region

27

Enriched layer

41

Epitaxial junction

15

Excess carrier resorption (in the base)

53

Field-effect transistor

100

Forward direction (of a P-N junction)

43

Forward recovery

54

Gate

34

Gate terminal (of a semiconductor device)

132

Gate triggering of a thyristor

60

Gate turning-off of a thyristor

61

Graded junction

6

Grown junction

14

Gunn diode

81

Heterogenous junction

16

Homogenous junction

17

Impact avalanche-(and-) transit time diode

77

Infra-red-emitting diode

127

Injection-(and-) transit time diode

78

Insulated-gate FET

101

Intrinsic region

25

Inversion layer

42

Junction

1

Junction diode

68

Junction transistor

98

Light-emitting diode (LED)

122

Main terminal

129

Mesa-structure

38

Micro-alloy junction

13

Microwave diode

76

Microwave limiting diode

85

Minority carrier storage (in the base)

52

MIS-structure

36

MIS-transistor

102

MOS-structure

37

MOS-transistor

103

N-gate thyristor

117

N-N+ junction

3

N-region

24

Off-state of a thyristor

56

Ommic junction

20

On-state of a thyristor

57

Optocoupler

121

Package (case) (of a semiconductor device)

133

Passive part of base region

30

P-gate thyristor

116

Photocoupler

121

Photoconductive cell

127в

Photodiode

127а

Photothyristor

127г

Phototransistor

127б

PIN diode

83

Planar junction

10

P-N junction

2

(P-N junction) avalanche breakdown

47

P-N junction electrical breakdown

46

(P-N junction) thermal breakdown

49

Point-contact diode

67

Point-contact junction

8

Point-contact transistor

97

P-P junction

4

P-region

23

Pulse thyristor

118

Punch-through

51

Rectifying junction

19

Reverse blocking diode thyristor

107

Reverse blocking state of a thyristor

58

Reverse blocking triode thyristor

111

Reverse conducting diode thyristor

108

Reverse conducting triode thyristor

112

Reverse direction (of a P-N junction)

44

Reverse recovery

55

Schottky (-barrier) diode

88

Schottky junction

18

Semiconductor analog indicator

126

Semiconductor assembly

64

Semiconductor assembly set

65

Semiconductor character display

120а

Semiconductor device

62

Semiconductor diode

66

Semiconductor frequency multiplication diode

86

Semiconductor mixer diode

80

Semiconductor modulator diode

87

Semiconductor noise diode

93

Semiconductor optoelectronic device

119

Semiconductor optoelectronic display

126

Semiconductor parametric (amplifier) diode

90

Semiconductor photoemitter

120

Semiconductor power device

63

Semiconductor rectifier assembly

71

Semiconductor rectifier diode

69

Semiconductor rectifier stack

70

Signal diode

72

Snap-off (stec-recovery) diode

73

Source

32

Structure

35

Surface junction

7

Switching diode

79

Switching of a thyristor

59

Terminal (of a semiconductor device)

128

Thyristor

105

Triac

113

Triode thyristor

110

Tunnel diode

74

Turn-off thyristor

114

Unitunnel (backward) diode

75

Variable capacitance diode

89

Voltage reference diode

91

Zenner (tunnel) breakdown

48